AA028P3-00中文资料ALPHA数据手册PDF规格书

Description

Alpha’s three-stage reactively-matched 27–31 GHz GaAs MMIC driver amplifier has typical small signal gain of 19 dB with a typical P1 dB of 16 dBm at 28 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance. Designed for 27–31 GHz LMDS and digital radio bands.

Features

■ Single Bias Supply Operation (6 V)

■ 19 dB Typical Small Signal Gain

■ 16 dBm Typical P1 dB Output Power at 28 GHz

■ 0.25 µm Ti/Pd/Au Gates

■ 100 On-Wafer RF and DC Testing

■ 100 Visual Inspection to MIL-STD-883 MT 2010