Plastic-Encapsulate Transistor

FEATURES Powerdissipation Pow0.8W(famb-25iC) Colectorourrent Iowt0.05A Colectorbasevoltage Vemceo:-150V Operatingandstoragejunctiontemperaturerange T,Tag:-55Cto+150C

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TIP

宏标殷达电子

VHF variable capacitance diode

DESCRIPTION The BB910 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.5; ratio:

文件：30.11 Kbytes 页数：4 Pages

PHI

PHI

POWER TRANSISTORS(15A,90W)

文件：143.24 Kbytes 页数：3 Pages

MOSPEC

统懋

Variable gain RF predriver amplifier

DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50). The SA910 integrates power detection and

文件：114.44 Kbytes 页数：13 Pages

PHI

PHI