丝印：A6F；Package：SOT-23；Bias Resistor Transistors

文件：248.47 Kbytes 页数：7 Pages

FS

丝印：A6F；Package：SOT-23；Bias Resistor Transistors

文件：248.47 Kbytes 页数：7 Pages

FS

丝印：A6F；Package：SOT-23；PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

文件：644.3 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

丝印：A6F；Package：SOT-23；Bias Resistor Transistor

文件：169.73 Kbytes 页数：9 Pages

LRC

乐山无线电

丝印：A6F；Package：SOT-23；Bias Resistor Transistor

文件：169.73 Kbytes 页数：9 Pages

LRC

乐山无线电

丝印：A6F；Package：SOT-23；PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

文件：644.3 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

丝印：A6FYW；Package：SOT-23；215mA, 100V High Speed Switching Diode

FEATURES AEC-Q101 qualified Fast switching speed Ideal for automated placement Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS High-speed switching General-purpose switching

文件：447.65 Kbytes 页数：5 Pages

TSC

台湾半导体

FAST RECOVERY DIODES

FEATURES ■ Short reverse recovery time ■ Low stored charge ■ Wide current range ■ Excellent surge capabilities ■ Standard JEDEC types ■ Stud cathode and stud anode versions ■ Fully characterized reverse recovery conditions

文件：2.96312 Mbytes 页数：10 Pages

IRF

FAST RECOVERY DIODES

FEATURES ■ Short reverse recovery time ■ Low stored charge ■ Wide current range ■ Excellent surge capabilities ■ Standard JEDEC types ■ Stud cathode and stud anode versions ■ Fully characterized reverse recovery conditions

文件：2.96312 Mbytes 页数：10 Pages

IRF

FAST RECOVERY DIODES

FEATURES ■ Short reverse recovery time ■ Low stored charge ■ Wide current range ■ Excellent surge capabilities ■ Standard JEDEC types ■ Stud cathode and stud anode versions ■ Fully characterized reverse recovery conditions

文件：2.96312 Mbytes 页数：10 Pages

IRF