512K X 16 Bit Low Voltage Super RAM

General Description The A64S9316 is a low operating current 8,388,608-bit Super RAM organized as 524,288 words by 16 bits and operates on low power supply voltage from 2.7V to 3.1V. It is built using AMIC’s high performance CMOS DRAM process. Using hidden refresh technique, the A64S9316 provides

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AMICC

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512K X 16 Bit Low Voltage Super RAM

General Description The A64S9316 is a low operating current 8,388,608-bit Super RAM organized as 524,288 words by 16 bits and operates on low power supply voltage from 2.7V to 3.1V. It is built using AMIC’s high performance CMOS DRAM process. Using hidden refresh technique, the A64S9316 provides

文件：171.54 Kbytes 页数：15 Pages

AMICC

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512K X 16 Bit Low Voltage Super RAM

General Description The A64S9316 is a low operating current 8,388,608-bit Super RAM organized as 524,288 words by 16 bits and operates on low power supply voltage from 2.7V to 3.1V. It is built using AMIC’s high performance CMOS DRAM process. Using hidden refresh technique, the A64S9316 provides

文件：171.54 Kbytes 页数：15 Pages

AMICC

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512K X 16 Bit Low Voltage Super RAM

General Description The A64S9316 is a low operating current 8,388,608-bit Super RAM organized as 524,288 words by 16 bits and operates on low power supply voltage from 2.7V to 3.1V. It is built using AMIC’s high performance CMOS DRAM process. Using hidden refresh technique, the A64S9316 provides

文件：171.54 Kbytes 页数：15 Pages

AMICC

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512K X 16 Bit Low Voltage Super RAM

General Description The A64S9316 is a low operating current 8,388,608-bit Super RAM organized as 524,288 words by 16 bits and operates on low power supply voltage from 2.7V to 3.1V. It is built using AMIC’s high performance CMOS DRAM process. Using hidden refresh technique, the A64S9316 provides

文件：171.54 Kbytes 页数：15 Pages

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16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory

DESCRIPTION\nThe A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sens • Standard Asynchronous SRAM Interface with Deep Power Down and Page Mode\n• Organization : 1M x 16Bit\n• Power Supply Voltage : 2.7 ~ 3.3 V\n• Page Size : 4 words\n• Page Mode Access (tPAA) : 35ns\n• Data Retention Voltage : 2.4V\n• Deep Power Down : 5uA\n• Tri-state Output and TTL Compatible;

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1M X 16 Bit Low Voltage Super RAM™

General Description\nThe A64S0616 is a low operating current 16,777,216-bit Super RAM organized as 1,048,576 words by 16 bits and operates on low power supply voltage from 2.7V to 3.1V. It is built using AMIC’s high performance CMOS DRAM process.\nUsing hidden refresh technique, the A64S0616 provide ■ Operating voltage: 2.7V to 3.1V\n■ Access times: 70 ns (max.)\n■ Current:\n   A64S0616 series:\n      Operating: 35mA (max.)\n      Power Down Standby: 10mA (max.)\n■ Fully SRAM compatible operation\n■ Full static operation, no clock or refreshing required\n■ All inputs and outputs are directly TT;

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2M X 16 Bit Low Voltage Super RAM

Description\nA64S16161 is a virtually static RAM, which uses DRAM type memory cells, but it has refresh transparency, so that you need not to imply refresh operation. Furthermore the interface is completely compatible to a low power Asynchronous type SRAM, you can operate as same as the Asynchronous ● Memory Cell : Dynamic memory( DRAM )\n● Refresh: Completely free\n● Power Down: Control by CS2( No Data Retention )\n● Byte Control : Capable of single byte operation\n● Power Consumption: 100μ A( Standby Current )\n● Operating Temperature Range: -40’C~+85’C\n● Composition:2,097,152 Word X 16 Bit\;

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