型号：TP1564-SR；Package：14-PinSOIC；Stable 3.8MHz, 130關A, RRIO, EveryCapTM Op Amps

文件：1.75763 Mbytes 页数：16 Pages

3PEAK

思瑞浦

型号：A64S0616；1M X 16 Bit Low Voltage Super RAM

General Description The A64S0616 is a low operating current 16,777,216-bit Super RAM organized as 1,048,576 words by 16 bits and operates on low power supply voltage from 2.7V to 3.1V. It is built using AMIC’s high performance CMOS DRAM process. Using hidden refresh technique, the A64S0616 provi

文件：171.57 Kbytes 页数：15 Pages

AMICC

欧密格光电

型号：A64S06161A；16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

文件：189.83 Kbytes 页数：13 Pages

AMICC

欧密格光电

型号：A64S06161A-70U；16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

文件：189.83 Kbytes 页数：13 Pages

AMICC

欧密格光电

型号：A64S06161AG-70；16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

文件：189.83 Kbytes 页数：13 Pages

AMICC

欧密格光电

型号：A64S06161AG-70F；16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

文件：189.83 Kbytes 页数：13 Pages

AMICC

欧密格光电

型号：A64S06161AG-70U；16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

文件：189.83 Kbytes 页数：13 Pages

AMICC

欧密格光电

型号：A64S06161AG-70UF；16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory

DESCRIPTION The A64S06161A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Page Mode. The A64S06161A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power

文件：189.83 Kbytes 页数：13 Pages

AMICC

欧密格光电

型号：A64S06162A；16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory

DESCRIPTION The A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost se

文件：200.61 Kbytes 页数：14 Pages

AMICC

欧密格光电

型号：A64S06162A-70U；16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory

DESCRIPTION The A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost se

文件：200.61 Kbytes 页数：14 Pages

AMICC

欧密格光电