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A5G35S008N_V02中文资料恩智浦数据手册PDF规格书
A5G35S008N_V02规格书详情
This 27 dBm RF power GaN transistor is designed for cellular base station
applications covering the frequency range of 3300 to 3800 MHz.
Features
• High terminal impedances for optimal broadband performance
• Designed for low complexity linearization systems
• Universal broadband driver
• Optimized for massive MIMO active antenna systems for 5G base stations
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP |
22+ |
NA |
5422 |
原装正品支持实单 |
询价 | ||
23+ |
SOP-16 |
3000 |
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询价 | |||
COMCHIP |
20+ |
R-6 |
3917 |
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询价 | ||
NXP SEMICONDUCTORS |
24+ |
N/A |
4106 |
原装原装原装 |
询价 | ||
NXP/恩智浦 |
2025+ |
57945 |
询价 | ||||
NXP |
2303 |
只做正品 |
询价 | ||||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Comchip |
22+ |
NA |
75 |
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询价 | ||
NXP |
500 |
询价 | |||||
NXP/恩智浦 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 |
