A5G23H110N_V01中文资料恩XP数据手册PDF规格书

This 13.8 W asymmetrical Doherty RF power GaN transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 2300 to 2400 MHz.

This part is characterized and performance is guaranteed for applications

operating in the 2300 to 2400 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

特性 Features

• High terminal impedances for optimal broadband performance

• Improved linearized error vector magnitude with next generation signal

• Able to withstand extremely high output VSWR and broadband operating

conditions

• Designed for low complexity linearization systems

• Optimized for massive MIMO active antenna systems for 5G base stations