丝印：A3G；Package：RM-8；55 V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational Amplifiers

FEATURES Low offset voltage: 5 μV maximum Extremely low offset voltage drift: 22 nV/°C maximum Low voltage noise density: 5.8 nV/√Hz typical 117 nV p-p typical from 0.1 Hz to 10 Hz Low input bias current: 50 pA typical Unity-gain crossover: 3 MHz typical Single-supply operation: inpu

文件：1.49017 Mbytes 页数：48 Pages

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亚德诺

丝印：A3G；Package：MSOP；55 V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational

FEATURES ► Low offset voltage: 5 μV maximum ► Extremely low offset voltage drift: 22 nV/°C maximum ► Low voltage noise density: 5.8 nV/√Hz typical ► 117 nV p-p typical from 0.1 Hz to 10 Hz ► Low input bias current: 50 pA typical ► Unity-gain crossover: 3 MHz typical ► Single-supply operatio

文件：5.02765 Mbytes 页数：33 Pages

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亚德诺

丝印：A3G；Package：MSOP；55 V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational

FEATURES ► Low offset voltage: 5 μV maximum ► Extremely low offset voltage drift: 22 nV/°C maximum ► Low voltage noise density: 5.8 nV/√Hz typical ► 117 nV p-p typical from 0.1 Hz to 10 Hz ► Low input bias current: 50 pA typical ► Unity-gain crossover: 3 MHz typical ► Single-supply operatio

文件：5.02765 Mbytes 页数：33 Pages

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亚德诺

丝印：A3G；Package：RM-8；55 V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational Amplifiers

FEATURES Low offset voltage: 5 μV maximum Extremely low offset voltage drift: 22 nV/°C maximum Low voltage noise density: 5.8 nV/√Hz typical 117 nV p-p typical from 0.1 Hz to 10 Hz Low input bias current: 50 pA typical Unity-gain crossover: 3 MHz typical Single-supply operation: inpu

文件：1.49017 Mbytes 页数：48 Pages

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亚德诺

丝印：A3G；Package：RM-8；55 V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational Amplifiers

FEATURES Low offset voltage: 5 μV maximum Extremely low offset voltage drift: 22 nV/°C maximum Low voltage noise density: 5.8 nV/√Hz typical 117 nV p-p typical from 0.1 Hz to 10 Hz Low input bias current: 50 pA typical Unity-gain crossover: 3 MHz typical Single-supply operation: inpu

文件：1.49017 Mbytes 页数：48 Pages

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亚德诺

丝印：A3G；Package：MSOP；55 V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational

FEATURES ► Low offset voltage: 5 μV maximum ► Extremely low offset voltage drift: 22 nV/°C maximum ► Low voltage noise density: 5.8 nV/√Hz typical ► 117 nV p-p typical from 0.1 Hz to 10 Hz ► Low input bias current: 50 pA typical ► Unity-gain crossover: 3 MHz typical ► Single-supply operatio

文件：5.02765 Mbytes 页数：33 Pages

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亚德诺

丝印：A3G；Package：SC-70-5；300mA Low Noise High PSRR LDO with Shutdown

文件：885.43 Kbytes 页数：17 Pages

FITIPOWER

天钰科技

丝印：a3G；Package：TSOT-23-5；300mA Low Noise High PSRR LDO with Shutdown

文件：885.43 Kbytes 页数：17 Pages

FITIPOWER

天钰科技

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High terminal impedances for optimal broadband performance  Advanced high performance in--package Doherty  Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 页数：18 Pages

恩XP

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High terminal impedances for optimal broadband performance  Advanced high performance in--package Doherty  Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 页数：18 Pages

恩XP