包装：散装 类别：盒子，外壳，机架 箱 描述：BOX STEEL GRAY 30\

HOFFMAN

包装：散装 类别：盒子，外壳，机架 箱 描述：BOX STEEL GRAY 30\

HOFFMAN

Digital transistors (built-in resistor)

Features In addition to the features of regular digital transistors, 1) Low VCE(sat) makes these transistors optimal for muting circuits. VCE(sat) = 40mV (Typ.) (IC/IB = 50mA/2.5mA) 2) They can be used at high current (IC = 600mA).

文件：60.34 Kbytes 页数：3 Pages

ROHM

罗姆

LM363 Precision Instrumentation Amplifier

文件：452.17 Kbytes 页数：22 Pages

NSC

国半

Silicon NPN Transistor RF Power Amp, PO = 4W

Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: ● Designed for UHF Military and Commercial Equipment ● 4W (Min) with Greater than 8dB Gain ● Withstands Infinite VSWR Under Operating Conditions ● Low Inductance St

文件：23.17 Kbytes 页数：2 Pages

NTE