N--Channel Enhancement--Mode Lateral MOSFETs

These 32 W RF power LDMOS transistors are designed for cellular base

station applications requiring very wide instantaneous bandwidth capability

covering the frequency range of 1805 to 1880 MHz.

Features

 Designed for Wide Instantaneous Bandwidth Applications

 Greater Negative Gate--Source Voltage Range for Improved Class C Operation

 Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

 Optimized for Doherty Applications

A2T18S162W31GSR3属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。恩智浦半导体公司制造生产的A2T18S162W31GSR3晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。