RF LDMOS Wideband Integrated Power Amplifiers

文件：831.27 Kbytes 页数：22 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：831.27 Kbytes 页数：22 Pages

恩XP

1800-2200 MHz，5.3 W平均值，28 V Airfast® LDMOS宽带射频集成功率放大器

The A2I22D050N wideband integrated circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats. • On-Chip Matching (50 Ohm Input, DC Blocked)\n• Designed for Digital Predistortion Error Correction Systems\n• RoHS Compliant\n• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.;

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