A2C35S12M3数据手册分立半导体产品的晶体管-IGBT-模块规格书PDF

描述 Description

This power module is a converter-inverter brake (CIB) topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz.

特性 Features

• ACEPACK 2 power module
•DBC Cu Al2O3 Cu
• Converter inverter brake topology
•1600 V, very low drop rectifiers for converter
•1200 V, 35 A IGBTs and diodes
•Soft and fast recovery diode
• Integrated NTC
• UL recognition: UL 1557, file E81734
• Isolation rating of 2500 Vrms/min
• RoHS compliant

简介

A2C35S12M3属于分立半导体产品的晶体管-IGBT-模块。由制造生产的A2C35S12M3晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。