A2C35S12M3分立半导体产品的晶体管-IGBT-模块规格书PDF中文资料

A2C35S12M3属于分立半导体产品的晶体管-IGBT-模块。由意法半导体集团制造生产的A2C35S12M3晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。

Features

• ACEPACK 2 power module

– DBC Cu Al2O3 Cu

• Converter inverter brake topology

– 1600 V, very low drop rectifiers for converter

– 1200 V, 35 A IGBTs and diodes

– Soft and fast recovery diode

• Integrated NTC

• UL recognition: UL 1557, file E81734

• Isolation rating of 2500 Vrms/min

• RoHS compliant

Description

This power module is a converter-inverter brake (CIB) topology in an ACEPACK 2

package with NTC, integrating the advanced trench gate field-stop technology from

STMicroelectronics. This new IGBT technology represents the best compromise

between conduction and switching loss, to maximize the efficiency of any converter

system up to 20 kHz.

Applications

• Inverters

• Motor drives