N-Channel 30 V (D-S) MOSFET

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VBSEMI

微碧半导体

1.1 GHz AGC AMPLIFIER FOR DBS TUNER AND MOBILE TELEPHONE

DESCRIPTION The µPC2723T is a silicon monolithic integrated circuit designed for miniature AGC amplifier. This amplifier realizes Auto gain control with external control circuit. This IC operates up to 1.1 GHz and therefore is suitable for DBS tuner, mobile telephone and other applications. The

文件：178.43 Kbytes 页数：12 Pages

NEC

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VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

文件：550.61 Kbytes 页数：52 Pages

NEC

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-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

文件：371.8 Kbytes 页数：40 Pages

NEC

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