丝印：A26；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：A26；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：A26；Package：SOT753；Bus buffer/line driver; 3-state

1. General description The 74AHC1G126; 74AHCT1G126 is a single buffer/line driver with 3-state output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. 2. Features and benefits • Symmetrical output impedance • Balance

文件：248.75 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：A26；Package：SOT-753；Bus buffer/line driver; 3-state

DESCRIPTION The 74AHC1G/AHCT1G126 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output to assume a high-impedance O

文件：80.41 Kbytes 页数：16 Pages

PHI

飞利浦

丝印：A26；Package：SOT-753；Bus buffer/line driver; 3-state

General description 74AHC1G126 and 74AHCT1G126 are high-speed Si-gate CMOS devices. They provide one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output to assume a high-impedance OFF-state

文件：103.07 Kbytes 页数：16 Pages

恩XP

丝印：A26；Package：SC-74A；Bus buffer/line driver; 3-state

1. General description The 74AHC1G126-Q100; 74AHCT1G126-Q100 is a single buffer/line driver with 3-state output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electro

文件：237.38 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：a26；Package：SC-74A；Bus buffer/line driver; 3-state

General description 74AHC1G126-Q100 and 74AHCT1G126-Q100 are high-speed Si-gate CMOS devices. They provide one non-inverting buffer/line driver with 3-state output. The output enable input pin (OE) controls the 3-state output. A LOW at pin OE causes the output to assume a high-impedance OFF-stat

文件：696.81 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：A26；Package：SC-74A；Bus buffer/line driver; 3-state

1. General description The 74AHC1G126-Q100; 74AHCT1G126-Q100 is a single buffer/line driver with 3-state output. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electro

文件：261.6 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：A26；Package：SOT765-1；Dual buffer/line driver; 3-state

1. General description The 74AHC2G126 and 74AHCT2G126 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A LOW at nOE causes the output to assume a high-impedance OFFst

文件：230.08 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：A26；Package：SOT505-2；Dual buffer/line driver; 3-state

1. General description The 74AHC2G126 and 74AHCT2G126 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A LOW at nOE causes the output to assume a high-impedance OFFst

文件：230.08 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司