SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RD

文件：66.67 Kbytes 页数：8 Pages

NEC

瑞萨

BOX HEADER IDC TYPE

BOX HEADER IDC TYPE PITCH: 2.54mm

文件：282.86 Kbytes 页数：1 Pages

DBLECTRO

BOX HEADER IDC TYPE

BOX HEADER IDC TYPE PITCH: 2.54mm

文件：282.86 Kbytes 页数：1 Pages

DBLECTRO

BOX HEADER IDC TYPE

BOX HEADER IDC TYPE PITCH: 2.54mm

文件：282.86 Kbytes 页数：1 Pages

DBLECTRO

BOX HEADER IDC TYPE

BOX HEADER IDC TYPE PITCH: 2.54mm

文件：282.86 Kbytes 页数：1 Pages

DBLECTRO

BOX HEADER IDC TYPE

BOX HEADER IDC TYPE PITCH: 2.54mm

文件：282.86 Kbytes 页数：1 Pages

DBLECTRO

BOX HEADER IDC TYPE

BOX HEADER IDC TYPE PITCH: 2.54mm

文件：282.86 Kbytes 页数：1 Pages

DBLECTRO