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TTA008B

Marking:A008B;Package:TO-126N;Bipolar Transistors Silicon PNP Epitaxial Type

Applications •PowerAmplifiers •PowerSwitching Features (1)HighDCcurrentgain:hFE=100to200(IC=-0.5A) (2)Lowcollectoremittersaturationvoltage:VCE(sat)=-0.5V(max)(IC=-1A) (3)High-speedswitching:tstg=300ns(typ.)(IC=-1A) (4)ComplementarytoTTC015B

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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