丝印：A008B；Package：TO-126N；Bipolar Transistors Silicon PNP Epitaxial Type

Applications • Power Amplifiers • Power Switching Features (1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ.) (IC = -1A) (4) Complementary to TTC015B

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