TTA008B

Marking：A008B；Package：TO-126N；Bipolar Transistors Silicon PNP Epitaxial Type

Applications •PowerAmplifiers •PowerSwitching Features (1)HighDCcurrentgain:hFE=100to200(IC=-0.5A) (2)Lowcollectoremittersaturationvoltage:VCE(sat)=-0.5V(max)(IC=-1A) (3)High-speedswitching:tstg=300ns(typ.)(IC=-1A) (4)ComplementarytoTTC015B

TTA009

Marking：A009；Package：PW-Mold；Bipolar Transistors Silicon PNP Epitaxial Type

Applications •PowerAmplifiers •PowerSwitching Features (1)Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(max)(IC=-1A,IB=-100mA) (2)High-speedswitching:tstg=300ns(typ.)(IC=-1A)

YFW2300MI

Marking：A0SHB；Package：SOT23-3L；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply

YFW3400AI

Marking：A09T；Package：SOT-23；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Lithiumbatteryprotection Wirelessimpact Mobilephonefastcharging

YFW3400B

Marking：A09T.；Package：SOT-23；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply

YFW3400CI

Marking：A09T..；Package：SOT-23；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply

YFW3400D

Marking：A09T；Package：SOT-23；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply

2SK3030DS-3

Marking：A0*；Package：SOT-23-3；N-Channel Enhancement MOSFET

74AHC1G00GV

Marking：A00；Package：SOT-753；2-input NAND gate

74AHC1G00GV-Q100

Marking：A00；Package：SOT753；2-input NAND gate