N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 packa

文件：102.95 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

Description AP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 packa

文件：102.95 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：105.93 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nAP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.\nThe TO-252 package

APEC

富鼎先进