Dual P-Channel PowerTrench® MOSFET

General Description\nThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). · –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.5 V\nRDS(ON) = 105 mW @ VGS = –3.0 V\nRDS(ON) = 115 mW @ VGS = –2.7 V\n· Extended VGSS range (±12V) for battery applications\n· Low gate charge\n· High performance trench technology for extremely\nlow RDS(ON)\n· High power and current handling capabilityAppl;

ONSEMI

安森美半导体

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

文件：124.2 Kbytes 页数：9 Pages

ANPEC

茂达电子

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

文件：124.2 Kbytes 页数：9 Pages

ANPEC

茂达电子

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

文件：124.2 Kbytes 页数：9 Pages

ANPEC

茂达电子