98ASB42669B中文资料安森美半导体数据手册PDF规格书

employing the Schottky Barrier principle in a metal−to−silicon

power rectifier. Features epitaxial construction with oxide passivation

and metal overlay contact. Ideally suited for low voltage, high

frequency switching power supplies; free wheeling diodes and

polarity protection diodes.

特性 Features

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Over−Voltage Protection

• Low Forward Voltage Drop

• ESD Ratings:

♦ Human Body Model = 3B (> 16000 V)

♦ Machine Model = C (> 400 V)

• NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These are Pb−Free Devices

Mechanical Characteristics

• Case: Molded Epoxy

• Epoxy Meets UL94, VO at 1/8″

• Weight: 95 mg (approximately)

• Maximum Temperature of 260°C / 10 Seconds for Soldering

• Cathode Polarity Band

• Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add “T3”

Suffix to Part Number

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Marking: BKJL