98ASB42669B中文资料安森美半导体数据手册PDF规格书

This device employs the Schottky Barrier principle in a

metalïtoïsilicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

特性 Features

• Compact Package with JïBend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• GuardïRing for OverïVoltage Protection

• Low Forward Voltage Drop

• NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AECïQ101

Qualified and PPAP Capable*

• These are PbïFree Devices

Mechanical Characteristics

• Case: Molded Epoxy

• Epoxy Meets UL 94 Vï0 @ 0.125 in

• Weight: 95 mg (Approximately)

• Cathode Polarity Band

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• ESD Ratings:

 Machine Model = C

 Human Body Model = 3B