98AON34266E中文资料安森美半导体数据手册PDF规格书

特性 Features

• 25 V, 0.22 A Continuous, 0.65 A Peak

• RDS(ON) = 4 Ω @ VGS = 4.5 V,

• RDS(ON) = 5 Ω @ VGS = 2.7 V.

• Very Low Level Gate Drive Requirements allowing Directop−

Eration in 3 V Circuits (VGS(th) < 1.5 V)

• Gate−Source Zener for ESD Ruggedness ( >6 kV Human Body Model)

• Compact Industry Standard SC70−6 Surface Mount Package.

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Low Voltage Applications as a Replacement for Bipolar Digital

Transistors and Small Signal MOSFETs