98AON25095D中文资料安森美半导体数据手册PDF规格书

This Insulated Gate Bipolar Transistor (IGBT) features robust and

cost effective Field Stop (FS2) trench construction with a monolithic

RC Diode. It provides a cost effective Solution for applications where

diode losses are minimal. The IGBT is optimized for low conduction

losses (low VCEsat) and is well suited for resonant or soft switching

applications.

Features

• Extremely Efficient Trench with Fieldstop Technology

• Low Conduction Design for Soft Switching Application

• Reduced Power Dissipation in Inducting Heating Application

• Reliable and Cost Effective Single Die Solution

• This is a Pb−Free Device

Typical Applications

• Inductive Heating

• Air Conditioning PFC

• Welding