98AON13862G中文资料安森美半导体数据手册PDF规格书

General Description

Using novel field stop IGBT technology, onsemi’s new series of

field stop 3rd generation IGBTs offer the optimum performance for

solar inverter, UPS, welder, telecom, ESS and PFC applications where

low conduction and switching losses are essential.

特性 Features

 Maximum Junction Temperature: TJ = 175C

 Positive Temperature Co−efficient for Easy Parallel Operating

 High Current Capability

 Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A

 100% of the Parts Tested for ILM(1)

 High Input Impedance

 Fast Switching

 Tighten Parameter Distribution

 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

 Solar Inverter, UPS, Welder, Telecom, ESS, PFC