98AON13666G中文资料安森美半导体数据手册PDF规格书

厂商型号	98AON13666G
功能描述	MOSFET - Dual N-Channel, Asymmetric, POWERTRENCH Power Clip 30 V
文件大小	485.23 Kbytes
页面数量	13 页
生产厂商	ON Semiconductor
企业简称	ONSEMI【安森美半导体】
中文名称	安森美半导体公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-26 14:02:00
人工找货	98AON13666G价格和库存，欢迎联系客服免费人工找货

General Description

This device includes two specialized N-Channel MOSFETs in

a dual package. The switch node has been internally connected to

enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET (Q2) have

been designed to provide optimal power efficiency.

Features

Q1: N-Channel

• Max RDS(on) = 5.0 m at VGS = 10 V, ID = 17 A

• Max RDS(on) = 6.5 m at VGS = 4.5 V, ID = 14 A

Q2: N-Channel

• Max RDS(on) = 2.4 m at VGS = 10 V, ID = 25 A

• Max RDS(on) = 3.0 m at VGS = 4.5 V, ID = 22 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses.

• MOSFET Integration Enables Optimum Layout for Lower Circuit

Inductance and Reduced Switch Node Ringing.

• RoHS Compliant

Applications

• Computing

• Communications

• General Purpose Point of Load