98AON13450G中文资料安森美半导体数据手册PDF规格书

厂商型号	98AON13450G
功能描述	6-Pin DIP High BVCEO Phototransistor Optocouplers
文件大小	372.83 Kbytes
页面数量	12 页
生产厂商	ON Semiconductor
企业简称	ONSEMI【安森美半导体】
中文名称	安森美半导体公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-26 22:59:00
人工找货	98AON13450G价格和库存，欢迎联系客服免费人工找货

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of

a gallium arsenide infrared emitting diode coupled with an NPN

phototransistor in a dual in−line package.

Features

 High BVCEO: 70 V Minimum

(CNY17XM, CNY17FXM, MOC8106M)

 Closely Matched Current Transfer Ratio (CTR) Minimizes

Unit−to−Unit Variation

 Current Transfer Ratio In Select Groups

 Very Low Coupled Capacitance Along With

No Chip−to−Pin 6 Base Connection for Minimum Noise

Susceptibility (CNY17FXM, MOC8106M)

 Safety and Regulatory Approvals:

 UL1577, 4,170 VACRMS for 1 Minute

 DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage

Applications

 Power Supply Regulators

 Digital Logic Inputs

 Microprocessor Inputs

 Appliance Sensor Systems

 Industrial Controls