4K 2.5V Microwire Serial EEPROM

Description: The Microchip Technology Inc. 93XX66A/B/C devices are 4K bit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA66C, 93LC66C or 93C66C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit co

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MICROCHIP

微芯科技

4K 2.5V Microwire Serial EEPROM

The Microchip Technology Inc. 93AA46/56/66 are 1K, 2K and 4K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power nonvolatile memory applications. Th

文件：185.46 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

4,096-Bit Serial Electrically Erasable PROM

Overview The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Features • Low power CMOS Te

文件：128.759 Kbytes 页数：12 Pages

ROHM

罗姆

4,096-Bit Serial Electrically Erasable PROM

Overview The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Features • Low power CMOS Te

文件：128.759 Kbytes 页数：12 Pages

ROHM

罗姆

4,096-Bit Serial Electrically Erasable PROM

Overview The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Features • Low power CMOS Te

文件：128.759 Kbytes 页数：12 Pages

ROHM

罗姆