8N65L-T2Q-T中文资料友顺数据手册PDF规格书

■ DESCRIPTION

The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

■ FEATURES

* RDS(ON) = 1.4Ω@VGS = 10 V

* Ultra low gate charge ( typical 28 nC )

* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness