MUN5231

Marking：8H；Package：SOT-323；NPN Silicon Bias Resistor Transistor

NPNSiliconBiasResistorTransistor

PDTA144EQC

Marking：8H；Package：SOT8009；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTA144EQC-Q

Marking：8H；Package：DFN1412D-3；50 V, 100 mA PNP resistor-equipped transistors

1.Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinanultrasmallDFN1412D-3(SOT8009) leadlessSurface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEDEC NPNcomplement: PDTA14

PESD1IVN24-LS

Marking：8H；Package：DFN1006BD-2；ESD protection for In-vehicle networks

1.Generaldescription ESDprotectiondeviceinaleadlessultrasmallDFN1006BD-2(SOD882BD)Surface-Mounted Device(SMD)plasticpackagewithside-wettableflanks,designedtoprotectautomotiveIn-vehicle networkbuslinesfromthedamagecausedbyElectroStaticdischarge(ESD)andothertra

PESD1IVN24LS-Q

Marking：8H；Package：DFN1006BD-2；ESD protection for in-vehicle networks

1.Generaldescription ESDprotectiondeviceinaleadlessultrasmallDFN1006BD-2(SOD882BD)Surface-Mounted Device(SMD)plasticpackagewithside-wettableflanks,designedtoprotectautomotivein-vehicle networkbuslinesfromthedamagecausedbyElectroStaticDischarge(ESD)andothertra

DTC322T1G

Marking：8H；Package：SOT-323；Bias Resistor Transistors

DTC322T3G

Marking：8H；Package：SOT-323；Bias Resistor Transistors

DTC708T5G

Marking：8H；Package：SOT-23；Bias Resistor Transistors

GBLC08HC

Marking：8H；Package：SOD323；Low Capacitance ESD device

LDTC123EET1G

Marking：8H；Package：SC-89；Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network