576-BIT BIPOLAR RAM (64 X 9)

[Signetics] DESCRIPTION The organization of this device allows byte storage of data, including parity. where parity is not monitored, the ninth bit can be used as a tag or status indicator for each word stored. Ideal for scratch-pad, push-down stacks, buffer memories, and other internal memory a

文件：129.58 Kbytes 页数：4 Pages

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16K-bit TTL bipolar PROM (2048 x 8)

DESCRIPTION The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure. The 82S191 and 82S191A are supplied with all outputs at logical Low. Outputs are programmed to a logic High level at

文件：53.97 Kbytes 页数：3 Pages

PHI

飞利浦

16K-bit TTL bipolar PROM (2048 x 8)

DESCRIPTION The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure. The 82S191 and 82S191A are supplied with all outputs at logical Low. Outputs are programmed to a logic High level at

文件：53.97 Kbytes 页数：3 Pages

PHI

飞利浦

576-BIT BIPOLAR RAM (64 X 9)

[Signetics] DESCRIPTION The organization of this device allows byte storage of data, including parity. where parity is not monitored, the ninth bit can be used as a tag or status indicator for each word stored. Ideal for scratch-pad, push-down stacks, buffer memories, and other internal memory a

文件：129.58 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

576-BIT BIPOLAR RAM (64 X 9)

[Signetics] DESCRIPTION The organization of this device allows byte storage of data, including parity. where parity is not monitored, the ninth bit can be used as a tag or status indicator for each word stored. Ideal for scratch-pad, push-down stacks, buffer memories, and other internal memory a

文件：129.58 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商