2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER

GENERAL DESCRIPTION The MSM81C55-5 has a 2k-bit static RAM (256 bytes) with parallel I/O ports and a timer. It uses silicon gate CMOS technology and consumes a standby current of 100 micro ampere, maximum, while the chip is not selected. Featureing a maximum access time of 400 ns, the MSM81C

文件：156.91 Kbytes 页数：19 Pages

OKIOki Electric Cable Co.,Ltd

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Radiation Hardened 256 x 8 CMOS RAM

The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Intersil radiation hardened Self Aligned Junction Isolated (SAJI) silicon gate technology. Latch-up free operation is achieved by the use of epitaxial starting material to eliminate the parasitic SCR effect seen in con

文件：86.12 Kbytes 页数：14 Pages

INTERSIL

2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER

GENERAL  DESCRIPTION\nThe MSM81C55-5 has a 2k-bit static RAM (256 bytes) with parallel I/O ports and a timer.  It uses silicon gate CMOS technology and consumes a standby current of 100 micro ampere, maximum, while the chip is not selected.  Featureing a maximum access time of 400 ns, the MSM81C55-5 • High speed and low power achieved with silicon gate CMOS technology\n• 256 words x 8bits RAM\n• Single power supply, 3 to 6 V\n• Completely static operation\n• On-chip address latch\n• 8-bit programmable I/O ports (port A and B)\n• TTL Compatible\n• RAM data hold characteristic at 2 V\n• 6-bit pro;

OKI

冲电线

Radiation Hardened 256 x 8 CMOS RAM

The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Intersil radiation hardened Self Aligned Junction Isolated (SAJI) silicon gate technology. Latch-up free operation is achieved by the use of epitaxial starting material to eliminate the parasitic SCR effect seen in con

文件：86.12 Kbytes 页数：14 Pages

INTERSIL

Radiation Hardened 256 x 8 CMOS RAM

文件：113.07 Kbytes 页数：11 Pages

INTERSIL