N-Channel 60 V (D-S) MOSFET

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VBSEMI

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 98A@ TC=25℃ ·Drain Source Voltage -VDSS= 68V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：999.1 Kbytes 页数：7 Pages

VBSEMI

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N-channel 68 V, 0.0082 廓, 98 A, TO-220 STripFET??II Power MOSFET

Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Features ■ Excep

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STMICROELECTRONICS

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