7804AS中文资料ETC数据手册PDF规格书

GENERAL DESCRIPTION

The ME7804AS is the N-Channel logic enhancement mode power

field effect transistors are produced using high cell density, DMOS

trench technology. This high density process is especially tailored

to minimize on-state resistance. These devices are particularly

suited for low voltage application such as cellular phone and

notebook computer power management and other battery

powered circuits where high-side switching , and low in-line power

loss are needed in a very small outline surface mount package.

FEATURES

● RDS(ON) ≦18 mΩ@VGS=10V

● RDS(ON) ≦30 mΩ@VGS=4.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current

capability

APPLICATIONS

● Power Management in Note book

● Portable Equipment

● Battery Powered System

● DC/DC Converter

● Load SwitchC

● LCD Display inverter