丝印：77；Package：SOT143B；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a small SOT143B Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance 3. Applications • Ultra high-speed switching •

文件：905.26 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：77；Package：SOT143B；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a small SOT143B Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • Qualified according to AEC-Q101 and recommended f

文件：205.35 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：77；Package：TSSOP6；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance 3. Applications • Ultra high-speed s

文件：903 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：77；Package：TSSOP6；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • Qualified according to AEC-Q101 and r

文件：204.48 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：77；Package：SOT666；General-purpose dual Schottky diode

1. General description General-purpose dual Schottky diode in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance 3. Applications • Ultra high-speed switchi

文件：192.94 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：77；Package：DO-214AA；Super Fast Recovery Diode

●Features Small power mold type Low forward voltage Low switching loss ●Application General rectification

文件：2.14675 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：77；Package：US2H；Schottky Barrier Diode Silicon Epitaxial

文件：251.66 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：77008012A；Package：LCCC；LM139-MIL Quad Differential Comparators

1 Features 1• Wide Supply Ranges – Single Supply: 2 V to 36 V (Tested to 30 V) – Dual Supplies: ±1 V to ±18 V (Tested to ±15 V) • Low Supply-Current Drain Independent of Supply Voltage: 0.8 mA (Typical) • Low Input Bias Current: 25 nA (Typical) • Low Input Offset Current: 3 nA (Typical)

文件：988.09 Kbytes 页数：20 Pages

TI

德州仪器

丝印：7700801CA；Package：CDIP；LM139-MIL Quad Differential Comparators

1 Features 1• Wide Supply Ranges – Single Supply: 2 V to 36 V (Tested to 30 V) – Dual Supplies: ±1 V to ±18 V (Tested to ±15 V) • Low Supply-Current Drain Independent of Supply Voltage: 0.8 mA (Typical) • Low Input Bias Current: 25 nA (Typical) • Low Input Offset Current: 3 nA (Typical)

文件：988.09 Kbytes 页数：20 Pages

TI

德州仪器

丝印：7700801DA；Package：CFP；LM139-MIL Quad Differential Comparators

1 Features 1• Wide Supply Ranges – Single Supply: 2 V to 36 V (Tested to 30 V) – Dual Supplies: ±1 V to ±18 V (Tested to ±15 V) • Low Supply-Current Drain Independent of Supply Voltage: 0.8 mA (Typical) • Low Input Bias Current: 25 nA (Typical) • Low Input Offset Current: 3 nA (Typical)

文件：988.09 Kbytes 页数：20 Pages

TI

德州仪器