76132S中文资料75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs数据手册Renesas规格书

描述 Description

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsThese N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

特性 Features

• Logic Level Gate Drive
• Ultra Low On-Resistance, rDS(ON)= 0.011Ω
• Temperature Compensating SABER© Model
• Thermal Impedance SABER Model
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”