SYSTEM 4 Hex Inch Bits High alloy CVM steel, hardened, on 4 mm hex stock.

文件：68.79 Kbytes 页数：1 Pages

Wiha

威汉

N-Channel 60 V (D-S) MOSFET

文件：980.27 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

包装：散装 类别：标签，标志，护栏，标识 标志，铭牌，招贴 描述：B959 SIGN 18 X 12 NO PARKING FIR

Brady Corporation

包装：散装 类别：标签，标志，护栏，标识 标志，铭牌，招贴 描述：B959 SIGN 18 X 12 NO PARKING FIR

Brady Corporation

包装：散装 类别：工具 螺丝和螺母起子 - 刀头、刀片和手柄 描述：BIT HEX 0.7MM 1.1\

Wiha

威汉

Fieldbus, 1 Pr #18 Str TC, PP ins, OS, PVC Jkt, CST Armor, LSZH Jkt, PLTC ISA/SP-50 Type A, PLTC

Product Description Fieldbus, 1 Pair 18AWG (7x26) Tinned Copper, PP insulation, Overall Beldfoil® Shield, PVC Inner Jacket, Steel Corrugated Tape Armor, LSZH Outer Jacket, PLTC ISA/SP-50 Type A, PLTC

文件：141.57 Kbytes 页数：2 Pages

BELDEN

百通

N-Channel 60 V (D-S) MOSFET

文件：1.00198 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • 15A, 55V\n• Simulation Models\n   - Temperature Compensated PSPICE® and SABER™ Models\n   - SPICE and SABER Thermal Impedance Models\n      Available on the WEB at: www.fairchildsemi.com\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for Sol;

ONSEMI

安森美半导体