SINGLE BUS BUFFER (3-STATE)

DESCRIPTION The 74LX1G125 is a low voltage CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ 5V TOLERANT INPUTS ■ HIGH SPEED: tPD= 4.7ns (MAX.) at VCC=3V ■ LOW POWER DISSIPATION: ICC=1µA(MAX.) at TA=25°C ■ POWER DOWN P

文件：145.92 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUS BUFFER (3-STATE)

DESCRIPTION The 74LX1G125 is a low voltage CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ 5V TOLERANT INPUTS ■ HIGH SPEED: tPD= 4.7ns (MAX.) at VCC=3V ■ LOW POWER DISSIPATION: ICC=1µA(MAX.) at TA=25°C ■ POWER DOWN P

文件：145.92 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUS BUFFER (3-STATE)

DESCRIPTION The 74LX1G125 is a low voltage CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ 5V TOLERANT INPUTS ■ HIGH SPEED: tPD= 4.7ns (MAX.) at VCC=3V ■ LOW POWER DISSIPATION: ICC=1µA(MAX.) at TA=25°C ■ POWER DOWN P

文件：145.92 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUS BUFFER (3-STATE)

DESCRIPTION The 74LX1G125 is a low voltage CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ 5V TOLERANT INPUTS ■ HIGH SPEED: tPD= 4.7ns (MAX.) at VCC=3V ■ LOW POWER DISSIPATION: ICC=1µA(MAX.) at TA=25°C ■ POWER DOWN P

文件：145.92 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体