74LVC2G02GS集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74LVC2G02GS
参数属性	74LVC2G02GS 封装/外壳为8-XFDFN；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为集成电路（IC）的门反相器；产品描述：IC GATE NOR 2CH 2-INP 8XSON
功能描述	Dual 2-input NOR gate
丝印标识	VB
封装外壳	SOT1203 / 8-XFDFN
文件大小	268.16 Kbytes
页面数量	17 页
生产厂商	NEXPERIA
中文名称	安世
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-15 16:01:00
人工找货	74LVC2G02GS价格和库存，欢迎联系客服免费人工找货

1. General description

The 74LVC2G02 is a dual 2-input NOR gate. Inputs can be driven from either 3.3 V or 5 V devices.

This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry

disables the output, preventing the potentially damaging backflow current through the device when

it is powered down.

2. Features and benefits

• Wide supply voltage range from 1.65 V to 5.5 V

• 5 V tolerant outputs for interfacing with 5 V logic

• Overvoltage tolerant inputs to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC = 3.0 V)

• CMOS low power consumption

• IOFF circuitry provides partial Power-down mode operation

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8-B/JESD36 (2.7 V to 3.6 V)

• ESD protection:

• HBM JESD22-A114F exceeds 2000 V

• MM JESD22-A115-A exceeds 200 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C