74LVC1G57GN集成电路（IC）的门反相器-多功能可配置规格书PDF中文资料

厂商型号	74LVC1G57GN
参数属性	74LVC1G57GN 封装/外壳为6-XFDFN；包装为卷带（TR）；类别为集成电路（IC）的门反相器-多功能可配置；产品描述：IC CONFIG MULTI-FUNC GATE 6XSON
功能描述	Low-power configurable multiple function gate
丝印标识	YC
封装外壳	SOT1115 / 6-XFDFN
文件大小	269.24 Kbytes
页面数量	18 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-3 16:30:00
人工找货	74LVC1G57GN价格和库存，欢迎联系客服免费人工找货

1. General description

The 74LVC1G57 is a configurable multiple function gate with Schmitt-trigger inputs. The device

can be configured as any of the following logic functions AND, OR, NAND, NOR, XNOR, inverter

and buffer; using the 3-bit input. All inputs can be connected directly to VCC or GND. Inputs can be

driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators

in mixed 3.3 V and 5 V environments.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry

disables the output, preventing the potentially damaging backflow current through the device when

it is powered down.

2. Features and benefits

• Wide supply voltage range from 1.65 V to 5.5 V

• Overvoltage tolerant inputs to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC = 3.0 V)

• CMOS low power dissipation

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• IOFF circuitry provides partial Power-down mode operation

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8B/JESD36 (2.7 V to 3.6 V).

• ESD protection:

• HBM JESD22-A114F exceeds 2000 V

• MM JESD22-A115-A exceeds 200 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C.