74LVC1G38GM集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74LVC1G38GM
参数属性	74LVC1G38GM 封装/外壳为6-XFDFN；包装为卷带（TR）；类别为集成电路（IC）的门反相器；产品描述：IC GATE NAND OD 1CH 2-INP 6XSON
功能描述	2-input NAND gate; open drain
丝印标识	YB
封装外壳	SOT886 / 6-XFDFN
文件大小	261.209 Kbytes
页面数量	17 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识	NEXPERIA
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-6 14:39:00
人工找货	74LVC1G38GM价格和库存，欢迎联系客服免费人工找货

1. General description

The 74LVC1G38 is a single 2-input NAND gate with open-drain output. Inputs can be driven from

either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed

3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry

disables the output, preventing the potentially damaging backflow current through the device when

it is powered down.

2. Features and benefits

• Wide supply voltage range from 1.65 V to 5.5 V

• 5 V tolerant outputs for interfacing with 5 V logic

• High noise immunity

• ±24 mA output drive (VCC = 3.0 V)

• CMOS low power consumption

• Open drain outputs

• Direct interface with TTL levels

• Inputs accept voltages up to 5 V

• Latch-up performance exceeds 250 mA

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8-B/JESD36 (2.7 V to 3.6 V).

• ESD protection:

• HBM JESD22-A114F exceeds 2000 V

• MM JESD22-A115-A exceeds 200 V

• Multiple package options

• Specified from -40 °C to +125 °C.