74LVC1G10GS集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74LVC1G10GS
参数属性	74LVC1G10GS 封装/外壳为6-XFDFN；包装为卷带（TR）；类别为集成电路（IC）的门反相器；产品描述：IC GATE NAND 1CH 3-INP 6XSON
功能描述	Single 3-input NAND gate
丝印标识	YM
封装外壳	SOT1202 / 6-XFDFN
文件大小	238.9 Kbytes
页面数量	15 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-5 8:31:00
人工找货	74LVC1G10GS价格和库存，欢迎联系客服免费人工找货

1. General description

The 74LVC1G10 provides a low-power, low-voltage single 3-input NAND gate.

The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device

in a mixed 3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall time.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry

disables the output, preventing the damaging backflow current through the device when it is

powered down.

2. Features and benefits

• Wide supply voltage range from 1.65 V to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC = 3.0 V)

• CMOS low power dissipation

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• Inputs accept voltages up to 5 V

• IOFF circuitry provides partial Power-down mode operation

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ESD protection:

• HBM JESD22-A114F exceeds 2000 V

• MM JESD22-A115-A exceeds 200 V

• CDM JESD22-C101E exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C