74LVC1G02GX集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74LVC1G02GX
参数属性	74LVC1G02GX 封装/外壳为4-XFDFN 裸露焊盘；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为集成电路（IC）的门反相器；产品描述：IC GATE NOR 1CH 2-INP 5X2SON
功能描述	Single 2-input NOR gate
丝印标识	VB
封装外壳	SOT1226-3 / 4-XFDFN 裸露焊盘
文件大小	255.89 Kbytes
页面数量	16 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-22 23:34:00
人工找货	74LVC1G02GX价格和库存，欢迎联系客服免费人工找货

1. General description

The 74LVC1G02 is a single 2-input NOR gate. Inputs can be driven from either 3.3 V or 5 V

devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V

environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and

fall times. This device is fully specified for partial power down applications using IOFF. The IOFF

circuitry disables the output, preventing the potentially damaging backflow current through the

device when it is powered down.

2. Features and benefits

• Wide supply voltage range from 1.65 V to 5.5 V

• Overvoltage tolerant inputs to 5.5 V

• High noise immunity

• CMOS low power dissipation

• IOFF circuitry provides partial Power-down mode operation

• ±24 mA output drive (VCC = 3.0 V)

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ESD protection:

• HBM JESD22-A114F exceeds 2000 V

• MM JESD22-A115-A exceeds 200 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C