74HCT2G00DC-Q100集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74HCT2G00DC-Q100
参数属性	74HCT2G00DC-Q100 封装/外壳为8-VFSOP（0.091"，2.30mm 宽）；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为集成电路（IC）的门反相器；产品描述：IC GATE NAND 2CH 2-INP 8VSSOP
功能描述	Dual 2-input NAND gate
丝印标识	T00
封装外壳	SOT765-1 / 8-VFSOP（0.091"，2.30mm 宽）
文件大小	207.74 Kbytes
页面数量	11 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-4 11:49:00
人工找货	74HCT2G00DC-Q100价格和库存，欢迎联系客服免费人工找货

1. General description

The 74HC2G00-Q100; 74HCT2G00-Q100 is a dual 2-input NAND gate. Inputs include clamp

diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of

VCC.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100

(Grade 1) and is suitable for use in automotive applications.

2. Features and benefits

• Automotive product qualification in accordance with AEC-Q100 (Grade 1)

• Specified from -40 °C to +85 °C and from -40 °C to +125 °C

• Wide supply voltage range from 2.0 V to 6.0 V

• Input levels:

• For 74HC2G00-Q100: CMOS level

• For 74HCT2G00-Q100: TTL level

• Symmetrical output impedance

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• ESD protection:

• MIL-STD-883, method 3015 exceeds 2000 V

• HBM JESD22-A114F exceeds 2000 V

• MM JESD22-A115-A exceeds 200 V (C = 200 pF; R = 0 Ω)