丝印：74HC132Y；Package：SO14(automotivegrade)；Quad 2-input Schmitt NAND gate

Features • High-speed: tPD = 11 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VH(typ) = 0.9 V at VCC = 5 V • Symmetrical output impedance: |IOH| = IOL = 4 mA (min.) • Balanced propagation delays: tPLH ≅ tPHL • Wide operating volta

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STMICROELECTRONICS

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