64-Bit Random Access Memory with 3-STATE Outputs

General Description The 74F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are 3-STATE and are in the high-impedance state whenever the Chip Select (CS) input is HIGH. The outputs are

文件：52.14 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

64-Bit Random Access Memory with TRI-STATEE Outputs

文件：164.2 Kbytes 页数：8 Pages

NSC

国半

64-Bit Random Access Memory with TRI-STATEE Outputs

文件：164.2 Kbytes 页数：8 Pages

NSC

国半

64-Bit Random Access Memory with 3-STATE Outputs

General Description The 74F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are 3-STATE and are in the high-impedance state whenever the Chip Select (CS) input is HIGH. The outputs are

文件：52.14 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

64-bit TTL bipolar RAM, non-inverting 3-State

DESCRIPTION The 74F219A is a high speed, 64–bit RAM organized as a 16–word by 4–bit array. Address inputs are buffered to minimize loading and are fully decoded on chip. The outputs are in high impedance state whenever the chip enable (CE) is high. The outputs are active only in the READ mode (WE

文件：91.64 Kbytes 页数：12 Pages

PHI

PHI