74AUP2G38DC中文资料Low-power dual 2-input NAND gate; open drain数据手册Nexperia规格书

描述 Description

The 74AUP2G38 provides the dual 2-input NAND gate with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.

特性 Features

• Wide supply voltage range from 0.8 V to 3.6 V
• High noise immunity
• Complies with JEDEC standards:
• JESD8-12 (0.8 V to 1.3 V)
• JESD8-11 (0.9 V to 1.65 V)
• JESD8-7 (1.2 V to 1.95 V)
• JESD8-5 (1.8 V to 2.7 V)
• JESD8-B (2.7 V to 3.6 V)

• ESD protection:
• HBM JESD22-A114F Class 3A exceeds 5000 V
• MM JESD22-A115-A exceeds 200 V
• CDM JESD22-C101E exceeds 1000 V

• Low static power consumption; ICC = 0.9 μA (maximum)
• Latch-up performance exceeds 100 mA per JESD78B Class II
• Inputs accept voltages up to 3.6 V
• Low noise overshoot and undershoot < 10 % of VCC
• IOFF circuitry provides partial Power-down mode operation
• Multiple package options
• Specified from -40 °C to +85 °C and -40 °C to +125 °C