74AUP2G14GS集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74AUP2G14GS
参数属性	74AUP2G14GS 封装/外壳为6-XFDFN；包装为卷带（TR）；类别为集成电路（IC）的门反相器；产品描述：IC INVERT SCHMITT 2CH 2-IN 6XSON
功能描述	Low-power dual Schmitt trigger inverter
丝印标识	pK
封装外壳	SOT1202 / 6-XFDFN
文件大小	291.91 Kbytes
页面数量	20 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-3 11:16:00
人工找货	74AUP2G14GS价格和库存，欢迎联系客服免费人工找货

1. General description

The 74AUP2G14 is a dual inverter with Schmitt-trigger inputs. This device ensures very low static

and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is

fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output,

preventing the potentially damaging backflow current through the device when it is powered down.

2. Features and benefits

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 of VCC

• IOFF circuitry provides partial Power-down mode operation

• Latch-up performance exceeds 100 mA per JESD 78B Class II

• Low static power consumption; ICC = 0.9 μA (maximum)

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• ESD protection:

• HBM JESD22-A114F Class 3A exceeds 5000 V

• MM JESD22-A115-A exceeds 200 V

• CDM JESD22-C101E exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

3. Applications

• Wave and pulse shaper

• Astable multivibrator

• Monostable multivibrator