74AUP2G00DC-Q100中文资料Low-power dual 2-input NAND gate数据手册Nexperia规格书

描述 Description

The 74AUP2G00-Q100 provides dual 2-input NAND function.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

特性 Features

• Automotive product qualification in accordance with AEC-Q100 (Grade 1)
• Specified from -40 °C to +85 °C and from -40 °C to +125 °C

• Wide supply voltage range from 0.8 V to 3.6 V
• High noise immunity
• Complies with JEDEC standards:
• JESD8-12 (0.8 V to 1.3 V)
• JESD8-11 (0.9 V to 1.65 V)
• JESD8-7 (1.2 V to 1.95 V)
• JESD8-5 (1.8 V to 2.7 V)
• JESD8-B (2.7 V to 3.6 V)

• ESD protection:
• HBM JESD22-A114F Class 3A exceeds 5000 V
• MM JESD22-A115-A exceeds 200 V
• MIL-STD-883, method 3015 Class 3A exceeds 5000 V

• Low static power consumption; ICC = 0.9 μA (maximum)
• Latch-up performance exceeds 100 mA per JESD78 Class II
• Inputs accept voltages up to 3.6 V
• Low noise overshoot and undershoot < 10 % of VCC
• IOFF circuitry provides partial power-down mode operation