74AUP2G00DC-Q100集成电路（IC）的门反相器规格书PDF中文资料

74AUP2G00DC-Q100属于集成电路（IC）的门反相器。由安世半导体(中国)有限公司制造生产的74AUP2G00DC-Q100门和反相器逻辑栅极和逆变器系列中的产品对单个逻辑信号执行基本逻辑运算（例如 AND、NOT、OR 等）。与触发器不同，它们不能够存储信息，不会对提供给其输入的信号立即做出响应。虽然早就被集成电路实施形式所取代，以用于实现复杂功能，但分立栅极仍可在仅需要非常简单逻辑功能的情况下使用。

1. General description

The 74AUP2G00-Q100 provides dual 2-input NAND function.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times

across the entire VCC range from 0.8 V to 3.6 V.

This device ensures a very low static and dynamic power consumption across the entire VCC range

from 0.8 V to 3.6 V.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry

disables the output, preventing a damaging backflow current through the device when it is powered

down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100

(Grade 1) and is suitable for use in automotive applications.

2. Features and benefits

• Automotive product qualification in accordance with AEC-Q100 (Grade 1)

• Specified from -40 °C to +85 °C and from -40 °C to +125 °C

• Wide supply voltage range from 0.8 V to 3.6 V

• High noise immunity

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• ESD protection:

• HBM JESD22-A114F Class 3A exceeds 5000 V

• MM JESD22-A115-A exceeds 200 V

• MIL-STD-883, method 3015 Class 3A exceeds 5000 V

• Low static power consumption; ICC = 0.9 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD78 Class II

• Inputs accept voltages up to 3.6 V

• Low noise overshoot and undershoot < 10 of VCC

• IOFF circuitry provides partial power-down mode operation